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Ionizable Gas Device Compatible with Integrated Circuit Device Size and Processing

IP.com Disclosure Number: IPCOM000037945D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cronin, JE: AUTHOR [+3]

Abstract

Devices using ionization of gas, e.g., noble gas light emitters, are made with processing techniques developed for manufacture of integrated circuits. Thus, ionizable gas devices may be made very small and can be incorporated into semiconductor device circuits.

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Ionizable Gas Device Compatible with Integrated Circuit Device Size and Processing

Devices using ionization of gas, e.g., noble gas light emitters, are made with processing techniques developed for manufacture of integrated circuits. Thus, ionizable gas devices may be made very small and can be incorporated into semiconductor device circuits.

Referring to the figure, an inorganic insulator 2 is first patterned and etched to form a pocket 4. An organic material is then deposited and planarized to temporarily fill pocket 4. Metal electrodes 6 and 8 are deposited next. Another layer of inorganic insulator 10 is deposited and a pocket 12 is defined, etched, filled temporarily with organic material, and planarized. Next, inorganic insulator 14 is deposited. Hole 16 is then defined and etched through insulator 14 by reactive ion etching (RIE). Etch gas is changed in the RIE tool and high gas pressure is used to remove all of the organic material in pockets 12 and 4. Thus, electrodes 6 and 8 project into a gas filled cavity. The gas in the cavity is then changed by evacuating the interior of the RIE tool and backfilling to any desired pressure with a noble gas. Hole 16 is immediately covered by insulating material 18 which is bonded to insulator 14 to form a hermetic seal.

Disclosed anonymously.

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