Browse Prior Art Database

Ion Beam Cr Etch Process

IP.com Disclosure Number: IPCOM000037969D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Curry, FD: AUTHOR [+3]

Abstract

An ion beam etching process is used to remove chromium (Cr) from vias in a layer of polyimide on a circuitized substrate which is being processed to make an electronic package to carry a semiconductor chip, or other such electronic device.

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Ion Beam Cr Etch Process

An ion beam etching process is used to remove chromium (Cr) from vias in a layer of polyimide on a circuitized substrate which is being processed to make an electronic package to carry a semiconductor chip, or other such electronic device.

The process comprises the steps of etching the Cr for about ten minutes with a relatively high powered (900 watts) ion beam using argon gas, followed by a relatively low powered ion beam etch using nitrogen gas to eliminate an undesired conductive layer on the polyimide which might otherwise form if the ion beam etch using nitrogen gas were not to be used.

Disclosed anonymously.

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