Browse Prior Art Database

Ultrasonic Bonding Technique

IP.com Disclosure Number: IPCOM000037987D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Carden, GR: AUTHOR [+5]

Abstract

Disclosed is a technique for ultrasonic bonding wire or ribbon material onto thin or low adhesion metallurgical layers.

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Ultrasonic Bonding Technique

Disclosed is a technique for ultrasonic bonding wire or ribbon material onto thin or low adhesion metallurgical layers.

Aluminum wire or ribbon is ultrasonically bonded directly to a silicon or silicon dioxide layer. The bond is located adjacent to a semiconductor device input/output interconnection site. This bond provides high normal pull strength, restraining and stabilizing the wire next to low adhesion bond pads. A low parameter (power, force, time), ultrasonic bond is formed to the low adhesion pad. Continued tool movement beyond this pad is followed by a second high strength silicon or silicon dioxide bond. This bond provides restraining and stabilization during wire or ribbon looping movements to the termination bond.

A metallurgical electrical interconnection is formed to thin or low adhesion metal layers. Low ultrasonic bond parameters prevent disruption or delamination of these metal layers. Adjacent single or double bonding to a silicon or silicon dioxide layer maintains high strength, high yield and reliable interconnections. This has been extended to GaAs semiconductor materials.

(Image Omitted)

Disclosed anonymously.

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