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A Process And Structure for Forming High Sheet Rho Resistors in Oxides

IP.com Disclosure Number: IPCOM000038066D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Beyer, KD: AUTHOR [+3]

Abstract

High value resistors (> 10KL/square) can be formed in oxide layers in which resistors are stable and have minimum capacitance.

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A Process And Structure for Forming High Sheet Rho Resistors in Oxides

High value resistors (> 10KL/square) can be formed in oxide layers in which resistors are stable and have minimum capacitance.

The resistors are formed by the following process steps. First, a high-energy, high-dose implant of a conducting species, such as chromium, aluminum, tantalum, or germanium, is implanted into an insulating layer (e.g., silicon dioxide) using a patterned photoresist mask. Next, the resist is stripped, and the wafer annealed at high temperature to form a cermet-type resistor.

Contacts can be made to the resistor using a number of techniques. One technique comprises the forming of contact studs at predetermined locations after wafer anneal to form the resistor contacts. These contacts are then made planar by depositing a dielectric around them.

For eliminating any contact resistance problems, deep trench holes are formed at the resistor contact locations and then filled with contact metal or polysilicon.

Still another technique comprises forming predetermined contact holes by a deep trench before ion-implantation and filling said trench holes with contact metal and/or doped polysilicon, then performing the ion-implantation.

Cermet resistors are desirable as they are stable up to the anneal temperature and planar with the oxide surface. Also, high dose implants are more accurately controlled than low dose implants.

Disclosed anonymously.

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