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Process for Improved Photoresist to Polyimide Adhesion

IP.com Disclosure Number: IPCOM000038173D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

O'Connor, JL: AUTHOR [+2]

Abstract

An amino-silane (A-1100) plus methanol solution is applied to the surface of cured polyimide and brought to an elevated temperature in a nitrogen environment prior to application of a novolak resin type of photoresist, thus achieving improved adhesion of the photoresist on polyimide. Improved adhesion is especially necessary when very small photoresist features are created which must adhere throughout a process of etching through a polyimide layer.

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Process for Improved Photoresist to Polyimide Adhesion

An amino-silane (A-1100) plus methanol solution is applied to the surface of cured polyimide and brought to an elevated temperature in a nitrogen environment prior to application of a novolak resin type of photoresist, thus achieving improved adhesion of the photoresist on polyimide. Improved adhesion is especially necessary when very small photoresist features are created which must adhere throughout a process of etching through a polyimide layer.

A-1100 in methanol in a concentration of 0.01 to 10% is spin applied to the surface of cured polyimide. Concentration of the solution controls thickness of applied A-1100. A first cure is performed in air for a few minutes at 100 degrees centigrade and a second cure is then performed at 300 degrees centigrade in a nitrogen environment. Novolak resin type of photoresist applied by standard process methods is found to have improved adhesion throughout developing and etching procedures.

The A-1100 film thus applied and cured on polyimide may be removed after stripping photoresist by a plasma of carbon tetrafluoride (CF4) gas.

Disclosed anonymously.

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