Browse Prior Art Database

Polymer Sidewall Image Transfer

IP.com Disclosure Number: IPCOM000038177D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bruce, JA: AUTHOR [+3]

Abstract

Certain polymers which have been exposed to light create a phenolic OH group and react to an organometallic vapor, e.g. hexamethyldisylazane (HMDS), to become resistant to etching in an oxygen plasma. By varying time and temperature of HMDS exposure, only an edge region of the exposed area of the polymer becomes resistant to etching. Thus, a polymer sidewall image which is smaller than can be defined by lithographic mask design remains after an oxygen plasma development process.

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Polymer Sidewall Image Transfer

Certain polymers which have been exposed to light create a phenolic OH group and react to an organometallic vapor, e.g. hexamethyldisylazane (HMDS), to become resistant to etching in an oxygen plasma. By varying time and temperature of HMDS exposure, only an edge region of the exposed area of the polymer becomes resistant to etching. Thus, a polymer sidewall image which is smaller than can be defined by lithographic mask design remains after an oxygen plasma development process.

Referring to Fig. 1, polymer 2 on substrate 4 is exposed to light L. As shown in Fig. 2, polymer 2 is exposed to and penetrated by HMDS vapor indicated by arrows. HMDS diffuses faster through the unreacted polymer than through the surface of exposed polymer. Thus, sidewalls of exposed polymer 2 completely react with HMDS earlier than does exposed polymer away from exposure edges. Referring to Fig. 3, HMDS reaction time and temperature are controlled such that only region E of polymer 2 remains after exposure to an oxygen plasma development process. The sidewall image E may be projected into substrate material by suitable anisotropic etching as is practiced in other sidewall image transfer processes.

Disclosed anonymously.

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