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Diffusion Defined Bridge Contact

IP.com Disclosure Number: IPCOM000038391D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 2 page(s) / 20K

Publishing Venue

IBM

Related People

Kenney, DM: AUTHOR

Abstract

An electrical connection is formed over a narrow vertical insulator disposed between a first conductive, highly doped (p+) silicon region and a second conductive region during integrated circuit construction. The method of interconnection is self-aligned, i.e., requires no photo masking step. In the figure, a highly doped (p+) polycrystalline silicon region 2 is electrically connected to a conductive region 4 by means of conductive bridge 6 disposed over a narrow vertical insulator 8. Region 10 is a silicon substrate. The conductive bridge 6 is formed by depositing a thin polycrystalline silicon film on the entire surface and thermally driving p+ dopant from region 2 into film 6, across separator 8, and over region 4 (as indicated by shading in film 6).

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Diffusion Defined Bridge Contact

An electrical connection is formed over a narrow vertical insulator disposed between a first conductive, highly doped (p+) silicon region and a second conductive region during integrated circuit construction. The method of interconnection is self-aligned, i.e., requires no photo masking step. In the figure, a highly doped (p+) polycrystalline silicon region 2 is electrically connected to a conductive region 4 by means of conductive bridge 6 disposed over a narrow vertical insulator 8. Region 10 is a silicon substrate. The conductive bridge 6 is formed by depositing a thin polycrystalline silicon film on the entire surface and thermally driving p+ dopant from region 2 into film 6, across separator 8, and over region 4 (as indicated by shading in film 6). When region 4 contains a concentration of p+ dopant below a critical value, the pconcentration is such that the unshaded portion of film 6 may be selectively removed by wet etching with a solution of ethylenediamine and pyrocathecol. Wherever film 6 lies over material having n type dopant, or less than the critical concentration of p+ dopant, undesired (i.e., unshaded) portions of the film 6 is removed by this etchant.

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