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Distributed Decoding for Dense Arrays

IP.com Disclosure Number: IPCOM000038412D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 2 page(s) / 49K

Publishing Venue

IBM

Related People

Wong, RC: AUTHOR

Abstract

A method has been developed to eliminate the need for discharging unselected source lines during access of semiconductor devices. The proposal suggests the shortening of word lines and an increase in their number so there are only fully selected cells along the selected word line. (Image Omitted) In high density pseudo-static random-access memory (RAM) designs discharge/restore has been required because of the long word lines, a situation which negatively affects cost and performance. The distributed decoding scheme proposed eliminates the discharge/restore requirement, thereby improving cost and performance of the device. In the circuitry as given in Fig.

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Distributed Decoding for Dense Arrays

A method has been developed to eliminate the need for discharging unselected source lines during access of semiconductor devices. The proposal suggests the shortening of word lines and an increase in their number so there are only fully selected cells along the selected word line.

(Image Omitted)

In high density pseudo-static random-access memory (RAM) designs discharge/restore has been required because of the long word lines, a situation which negatively affects cost and performance. The distributed decoding scheme proposed eliminates the discharge/restore requirement, thereby improving cost and performance of the device. In the circuitry as given in Fig. 1, it is desirable to discharge the unselected source lines (SLs) during access; otherwise, the word line (WL) drop may degrade the array performances of cells at the end of the WL. The proposed distributed decoding scheme is shown in Fig.2 with a row decoder 1 at the left and a column decoder 2 at the top. There are 64 column selects divided into 8 groups and 64 row selects. In the distributed decoding scheme the main word line can be decoded with any known technique such as the matrix decode or three level decode, although the unselected bit groups must be deselected. During standby all bit group switches are on so the cell circuits may drain to the proper bias. All word segment transistors are saturated during standby with column decoders precharged high. The unselected...