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Browse Prior Art Database

Raised Source/Drain Structure

IP.com Disclosure Number: IPCOM000038681D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Davari, B: AUTHOR [+3]

Abstract

This article relates generally to CMOS integrated circuit devices and, more particularly, to transistor source/drain junction construction. Shallow source/drain junctions for submicron CMOS technology can be fabricated with lower sheet resistance, lower leakage current and improved reliability by forming a raised conductive shunt film over the source and drain. The construction steps for an n-channel device are described below: In Fig. 1, the source/drain area of substrate 1 is defined by shallow trench isolation oxide 2. Gate oxide layer 3 is grown, and a channel dopant added, if necessary. Gate material 4, such as tungsten, is deposited, and an insulating nitride layer 5 is added over the junction area.

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Raised Source/Drain Structure

This article relates generally to CMOS integrated circuit devices and, more particularly, to transistor source/drain junction construction. Shallow source/drain junctions for submicron CMOS technology can be fabricated with lower sheet resistance, lower leakage current and improved reliability by forming a raised conductive shunt film over the source and drain. The construction steps for an n- channel device are described below: In Fig. 1, the source/drain area of substrate 1 is defined by shallow trench isolation oxide 2. Gate oxide layer 3 is grown, and a channel dopant added, if necessary. Gate material 4, such as tungsten, is deposited, and an insulating nitride layer 5 is added over the junction area. The gate is patterned, further nitride is added as an insulator over the gate and etched by reactive ion etching to form side

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walls 7 and expose bare silicon at the source and drain on either side of the gate sidewalls. Conductive shunt film 8 is then deposited. Conductive shunt film can be deposited more selectively as a tungsten silicide layer or polysilicon layer transformed subsequently into a silicide layer, or selectively as silicon or polysilicon at low temperature or tungsten. The nonselective coating is illustrated in Fig. 1. Dopant forming the source/drain may be introduced by either ion implantation or diffusion at this point or a dopant could have been introduced prior to deposition of the shunt layer. I...