Browse Prior Art Database

Selective Polysilicon to Nitride Etching

IP.com Disclosure Number: IPCOM000038799D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Giammarco, NJ: AUTHOR [+3]

Abstract

Disclosed is a process which selectively etches polysilicon down to a nitride layer using a photoresist mask. The process uses a gas mixture of SF6/CCl2F2 to isotropically etch polysilicon with a high selectivity to nitride using a photoresist mask in a high pressure single-wafer plasma etch tool. The process achieves polysilicon etch rates in excess of 5000 Ao min and nitride etch rates less than 650 Ao/min with a resultant selectivity of polysilicon to nitride of / 8:1. The lateral-to-vertical etch rate ratio is equal to about 0.7:1.

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Selective Polysilicon to Nitride Etching

Disclosed is a process which selectively etches polysilicon down to a nitride layer using a photoresist mask. The process uses a gas mixture of SF6/CCl2F2 to isotropically etch polysilicon with a high selectivity to nitride using a photoresist mask in a high pressure single-wafer plasma etch tool. The process achieves polysilicon etch rates in excess of 5000 Ao min and nitride etch rates less than 650 Ao/min with a resultant selectivity of polysilicon to nitride of / 8:1. The lateral-to-vertical etch rate ratio is equal to about 0.7:1.

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