Browse Prior Art Database

# Stud Interlevel Contact Resistance Monitoring

IP.com Disclosure Number: IPCOM000038800D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 2 page(s) / 30K

IBM

## Related People

Cronin, JE: AUTHOR

## Abstract

By means of four-point probe monitors, measurement of total contact resistance between two levels of conductive lines connected by an interlevel stud and characterization of the individual components contributing to the total resistance may be determined. The figure is a schematic of a monitor structure comprised of a first level wire M1 interconnected to a second level wire M2 through a metal stud between levels. Total resistance R of the interconnection between M1 and M2 is R = V/I, where I is the current passing through the interconnection and V is the voltage developed across the interconnection.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 65% of the total text.

Page 1 of 2

Stud Interlevel Contact Resistance Monitoring

By means of four-point probe monitors, measurement of total contact resistance between two levels of conductive lines connected by an interlevel stud and characterization of the individual components contributing to the total resistance may be determined. The figure is a schematic of a monitor structure comprised of a first level wire M1 interconnected to a second level wire M2 through a metal stud between levels. Total resistance R of the interconnection between M1 and M2 is R = V/I, where I is the current passing through the interconnection and V is the voltage developed across the interconnection. Resistance R is comprised of the sum of resistance components: r1 = interface resistance between M1 and the stud r2 = " " " M2 " " "

r3 = stud resistance

r4 = resistance due to current crowding in the monitor

structure Measurement of R2 = r1 + r4 is acquired by a crossed wire monitor, wherein line M1 is constructed by depositing M1 metal on an insulator and photo-etching. A second insulating layer is deposited and, while via holes are being etched for studs in other locations, a trough of width less than twice the stud metal thickness is etched orthogonally to the M1 line. During normal formation of a stud, the trough is filled and a line is thus formed which is connected to line M1. This monitor is protected from further processing steps. Measurement of R3 = r2 + r4 is acquired by a monitor comprised of a lower line form...