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Browse Prior Art Database

One-Dimensional Flow Electron Gas Semiconductor Device

IP.com Disclosure Number: IPCOM000038841D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Eastman, LF: AUTHOR [+3]

Abstract

In a semiconductor device, high carrier mobility and velocity are achieved through the construction of a quantum well with a corrugated side, which in turn provides a one-dimensional electron gas carrier flow. The corrugation may be formed by terracing using anisotropic crystallographic plane growth. An exemplary metal-insulator-semiconductor field-effect transistor (MISFET) structure in GaAs is shown in a side view in Fig. 1 and a plan view in Fig. 2. (Image Omitted) One illustration of the formation of the principle in a device is as follows: Using molecular beam epitaxy (MBE) of AlxGa1-xAs at sufficiently low temperatures and low angle deviation from (100) {in the [111], for the vector perpendicular to the surface} produces regular terraces on the surface.

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One-Dimensional Flow Electron Gas Semiconductor Device

In a semiconductor device, high carrier mobility and velocity are achieved through the construction of a quantum well with a corrugated side, which in turn provides a one-dimensional electron gas carrier flow. The corrugation may be formed by terracing using anisotropic crystallographic plane growth. An exemplary metal-insulator-semiconductor field-effect transistor (MISFET) structure in GaAs is shown in a side view in Fig. 1 and a plan view in Fig. 2.

(Image Omitted)

One illustration of the formation of the principle in a device is as follows: Using molecular beam epitaxy (MBE) of AlxGa1-xAs at sufficiently low temperatures and low angle deviation from (100) {in the [111], for the vector perpendicular to the surface} produces regular terraces on the surface. These terraces are made up of (100) and (111) planes, with larger areas of the (100). The ridges of the terraces are in the [1-10] direction. The period of the terraces will be larger for lower temperatures and for a lower substrate tilt angle. As an illustration, at a 615oC substrate temperature during growth and 2o tilt angle since the sine (2o) is the terrace height divided by the period, the period will be of the order of about 1000 Ao and the height of the terrace will be of the order of 30 Ao . Thin quantum wells of GaAs (&150 Ao) are thus grown by MBE on an Al13Ga17As buffer layer, and N-type Al13Ga17As is thereafter grown on top of this quantum well. In the structure, electrons are located in the quantum well and can move freely in the [1-10] direction, but do not move as well in the [110] direction. In F...