Browse Prior Art Database

GaAs-GaAlAs HOT ELECTRON TRANSISTOR

IP.com Disclosure Number: IPCOM000038843D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Heiblum, M: AUTHOR

Abstract

The addition of layers at the base collector interface of a GaAs-GaAlAs hot electron transistor will operate to cancel reflections for monoenergy electrons. The implementation is shown in Figs. 1 and 2. (Image Omitted) The design of the interfaces shown above is such that reflections will be cancelled for monoenergy electrons by modulating the shape of the conduction band at the interface. In Fig. 1, d1 and x, and in Fig. 2, d1 and d2 (where d1 and d2 are values of thicknesses and x gives the amount of Al in the alloy) are selected to cancel the reflections of electrons of a single energy. For a beam of electrons which is not fully monoenergetic, a "wide band" anti-reflection coating can be designed by having more complex multilayers that are the analog of a microwave or optical anti-reflection coating.

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GaAs-GaAlAs HOT ELECTRON TRANSISTOR

The addition of layers at the base collector interface of a GaAs-GaAlAs hot electron transistor will operate to cancel reflections for monoenergy electrons. The implementation is shown in Figs. 1 and 2.

(Image Omitted)

The design of the interfaces shown above is such that reflections will be cancelled for monoenergy electrons by modulating the shape of the conduction band at the interface. In Fig. 1, d1 and x, and in Fig. 2, d1 and d2 (where d1 and d2 are values of thicknesses and x gives the amount of Al in the alloy) are selected to cancel the reflections of electrons of a single energy. For a beam of electrons which is not fully monoenergetic, a "wide band" anti-reflection coating can be designed by having more complex multilayers that are the analog of a microwave or optical anti-reflection coating.

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