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CVD OF SILICON AND SILICON COMPOUNDS USING Si2Cl6

IP.com Disclosure Number: IPCOM000038879D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Scott, BA: AUTHOR [+2]

Abstract

Hexachlorodisilane (Si2Cl6) is a silicon halide dimer that is an excellent alternative to silane (SiH4) and mono-silicon chlorides (SiH2Cl2) as a source for chemical vapor deposition (CVD) of silicon films, and probably silicon nitride, silicon dioxide, and metal silicide films. Si2Cl6 is a non-flammable liquid which, due to its room temperature vapor pressure of 4 mm, can be conveniently transported to a CVD reactor by passing H2 or an insert gas through a bubbler containing the liquid. The decomposition also will proceed in the absence of hydrogen. Films may be deposited at lower temperatures than those required for SiCl4 (1100oC) or SiH2Cl2 and is far safer than using spontaneously flammable SiH4 .

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CVD OF SILICON AND SILICON COMPOUNDS USING Si2Cl6

Hexachlorodisilane (Si2Cl6) is a silicon halide dimer that is an excellent alternative to silane (SiH4) and mono-silicon chlorides (SiH2Cl2) as a source for chemical vapor deposition (CVD) of silicon films, and probably silicon nitride, silicon dioxide, and metal silicide films. Si2Cl6 is a non-flammable liquid which, due to its room temperature vapor pressure of 4 mm, can be conveniently transported to a CVD reactor by passing H2 or an insert gas through a bubbler containing the liquid. The decomposition also will proceed in the absence of hydrogen. Films may be deposited at lower temperatures than those required for SiCl4 (1100oC) or SiH2Cl2 and is far safer than using spontaneously flammable SiH4 . Silicon films may be prepared in a horizontal hot-walled system by passing Si2Cl6 vapor in either a nitrogen or nitrogen-hydrogen carrier gas over horizontal substrates at temperatures as low as 425oC. In an atmosphere pressure system with a Si2Cl6 flow rate of 7x10-3 moles/hr (400 cc/min of gas through bubbler) in 2000 cc/min of carrier gas, the growth rate varies from 500 angstroms/hr at 450oC to 2.5 mm/hr at 850oC. This can be changed by altering the flow rate. The growth rate will increase above 850oC. There are two silicon growth rate regions with this source compound. Above 700oC the growth rate increases sharply with temperature with an activation energy of 34k cal/mole. Below 700oC the rate is less temperatur...