Browse Prior Art Database

Particle Beam Positioning by Means of a Laser Beam

IP.com Disclosure Number: IPCOM000039076D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Elsner, G: AUTHOR [+4]

Abstract

Simultaneous irradiation of a biased MOS-like semiconductor target 7 with a particle beam 1 and a focussed laser beam 5 generates a maximum substrate current if both beams are positioned in coincidence. The particle beam 1 with its intensity profile 4 may be an ion beam (e.g., of a secondary Ion Mass Spectroscopy (SIMS) apparatus or an ion implantation system) or a neutral particle beam; it impinges on substrate 7 which is covered with a thin isolating layer 6 and biased to approximately -50 V by voltage source 9. A sensitive ammeter 8 records a current whenever laser beam 5, which is focussed by lens 2 and raster-deflected by deflection unit 3, overlaps particle beam 1.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Particle Beam Positioning by Means of a Laser Beam

Simultaneous irradiation of a biased MOS-like semiconductor target 7 with a particle beam 1 and a focussed laser beam 5 generates a maximum substrate current if both beams are positioned in coincidence. The particle beam 1 with its intensity profile 4 may be an ion beam (e.g., of a secondary Ion Mass Spectroscopy (SIMS) apparatus or an ion implantation system) or a neutral particle beam; it impinges on substrate 7 which is covered with a thin isolating layer 6 and biased to approximately -50 V by voltage source 9. A sensitive ammeter 8 records a current whenever laser beam 5, which is focussed by lens 2 and raster-deflected by deflection unit 3, overlaps particle beam 1. The current depends on the particle density at the site of the finely focussed laser, so that the maximum current corresponds to the exact beam coincidence; sweeping the laser across the particle beam yields the beam profile with a high lateral resolution. If MOS-structures on mask and wafer in an ion implantion device are patterned into suitable registration marks and simultaneously subjected to a broad ion beam and then scanned by a finely focussed layer beam, in-situ registration is achieved with great precision.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]