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Adhesion Promoter for Photoresist Process

IP.com Disclosure Number: IPCOM000039157D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kroll, CT: AUTHOR

Abstract

This article discusses the use of a plasma nitride layer as an adhesion promoter for photoresist material. If a substrate is being processed in a highly humid environment or has absorbed moisture, it is difficult to obtain good adhesion between an applied photoresist and the substrate. It has been found that a plasma nitride layer serves as an effective adhesion promoter, even in the presence of high humidity. It is believed that the plasma nitride can be used readily in either dry or wet etch processes and can be layered over any substrate material, including metals. If the plasma nitride is dry etched, the underlying layer should not be disturbed.

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Adhesion Promoter for Photoresist Process

This article discusses the use of a plasma nitride layer as an adhesion promoter for photoresist material. If a substrate is being processed in a highly humid environment or has absorbed moisture, it is difficult to obtain good adhesion between an applied photoresist and the substrate. It has been found that a plasma nitride layer serves as an effective adhesion promoter, even in the presence of high humidity. It is believed that the plasma nitride can be used readily in either dry or wet etch processes and can be layered over any substrate material, including metals. If the plasma nitride is dry etched, the underlying layer should not be disturbed.

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