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Organosilane RIE Barrier

IP.com Disclosure Number: IPCOM000039168D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Agostino, PA: AUTHOR

Abstract

This article concerns a new reactive ion etch (RIE) barrier material, a spinnable organosilane compound offering a negligible RIE rate in oxygen, yet easily removable by exposure to CF4 plasma. In present thin film technology practice, patterns are generated by the transfer of lithographic patterns to a lift-off stencil composed of alternating layers of materials that are either susceptible or not to oxygen RIE. Non-susceptible layers are referred to as RIE barriers and, under present processing, are made by the use of a plasma reaction in special CVD (chemical vapor deposition) plasma deposition tools. This procedure requires the use of expensive processing equipment to ensure uniformly deposited films (layers).

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Organosilane RIE Barrier

This article concerns a new reactive ion etch (RIE) barrier material, a spinnable organosilane compound offering a negligible RIE rate in oxygen, yet easily removable by exposure to CF4 plasma. In present thin film technology practice, patterns are generated by the transfer of lithographic patterns to a lift-off stencil composed of alternating layers of materials that are either susceptible or not to oxygen RIE. Non-susceptible layers are referred to as RIE barriers and, under present processing, are made by the use of a plasma reaction in special CVD (chemical vapor deposition) plasma deposition tools. This procedure requires the use of expensive processing equipment to ensure uniformly deposited films (layers). The organosilane RIE barrier material here disclosed is prepared by first reacting gamma-amino propyl-triethoxysilane and hexamethyl- disilazane in an aqueous/ethanol solution in the presence of hexamethyl- disilazane in an aqueous/ethanol solution in the presence of an acid. The resultant solution is then used for spinning-on coatings of the organosilane on wafers or substrates. The coated parts are then subjected to a 230oC bake for five minutes to yield a uniformly thick (~3000 angstroms) coating that is properly resistant to oxygen RIE, e.g., an oxygen RIE etch rate of 10 angstroms per minute vs. a CF4 etch rate of 475 angstroms per minute is obtained. Employment of the disclosed organosilane RIE barrier material overcomes pr...