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Rapid Furnace Anneal

IP.com Disclosure Number: IPCOM000039212D
Original Publication Date: 1987-May-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Dorval, D: AUTHOR [+4]

Abstract

An ion implant process in advanced bipolar technology is monitored on Rs test wafers which are post-processed with their relative jobs. Consequently, Rs is measured after processing a long time: photoresist mask stripping - drive-in anneal. According to the present disclosure, a rapid furnace anneal is suggested to give quicker monitoring of Rs implant. One test wafer from each job is post-processed separately in a dedicated furnace maintained at 1000oC. The wafer is introduced into the furnace at 1000oC. After temperature recovery, the wafer is maintained at 1000o during 60 minutes. Next, the wafer is cooled during 15 minutes and characterization may then take place. Previously, the ion implant was held up until the characterization results were known.

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Rapid Furnace Anneal

An ion implant process in advanced bipolar technology is monitored on Rs test wafers which are post-processed with their relative jobs. Consequently, Rs is measured after processing a long time: photoresist mask stripping - drive-in anneal. According to the present disclosure, a rapid furnace anneal is suggested to give quicker monitoring of Rs implant. One test wafer from each job is post- processed separately in a dedicated furnace maintained at 1000oC. The wafer is introduced into the furnace at 1000oC. After temperature recovery, the wafer is maintained at 1000o during 60 minutes. Next, the wafer is cooled during 15 minutes and characterization may then take place. Previously, the ion implant was held up until the characterization results were known. Now, with the present process, tools are never held for the characterization results. Thus, tool capacity has been increased.

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