Browse Prior Art Database

Back Etch Metallization

IP.com Disclosure Number: IPCOM000039487D
Original Publication Date: 1987-Jun-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Moritz, H: AUTHOR

Abstract

The described method combines the lift-off technique with subtractive etching for forming a metallization pattern. On a substrate 1, selectively covered by an insulating layer 2, a photoresist mask 3, corresponding to the negative of the desired metallization pattern, is formed (Fig. 1). Metal 4 is blanket-deposited by evaporation, with the substrate temperatures being raised well over the softening point of the resist after the entire resist mask 3 has been covered with metal for good metal adhesion. Then, the structure is covered with a material 5, say, a photoresist, such that a planar surface is formed (Fig. 2). In the next step, material 5 is back etched until metal 4 on mask 3 is exposed.

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Back Etch Metallization

The described method combines the lift-off technique with subtractive etching for forming a metallization pattern. On a substrate 1, selectively covered by an insulating layer 2, a photoresist mask 3, corresponding to the negative of the desired metallization pattern, is formed (Fig. 1). Metal 4 is blanket-deposited by evaporation, with the substrate temperatures being raised well over the softening point of the resist after the entire resist mask 3 has been covered with metal for good metal adhesion. Then, the structure is covered with a material 5, say, a photoresist, such that a planar surface is formed (Fig. 2). In the next step, material 5 is back etched until metal 4 on mask 3 is exposed. Etching is continued with an etchant attacking metal 4 much faster than material 5 and is stopped after metal 4 has been removed from the surface and partly removed from the side walls of mask 3, so that grooves 6 are formed (Fig. 3). Finally, mask 3 and the remainder of material 5 are removed.

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