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Radiation-Curable Polysiloxanes

IP.com Disclosure Number: IPCOM000039786D
Original Publication Date: 1987-Aug-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Babich, ED: AUTHOR [+5]

Abstract

Typical negative photoresists, which use cinnamoyl chloride or acrylic functional groups as photo crosslinkable groups, are neither thermally stable nor plasma etch resistant. By incorporating radiation curable groups with polysiloxane polymers, stability, radiation sensitivity, and plasma resistance can be obtained. The synthesis is a simple condensation reaction, whereby radiation sensitive monomers can be reacted with polysiloxanes having amino, hydroxy, or thio - funtional groups pendant to the backbone (Si-O)x polymer chain. This type of synthesis has several advantages: 1)The sensitivity of the polymer can be optimized by adjusting the ratio of pendant groups. 2)Highly crosslinked branched structures are formed upon irradia tion, resulting in thermally stable polymers.

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Radiation-Curable Polysiloxanes

Typical negative photoresists, which use cinnamoyl chloride or acrylic functional groups as photo crosslinkable groups, are neither thermally stable nor plasma etch resistant. By incorporating radiation curable groups with polysiloxane polymers, stability, radiation sensitivity, and plasma resistance can be obtained. The synthesis is a simple condensation reaction, whereby radiation sensitive monomers can be reacted with polysiloxanes having amino, hydroxy, or thio - funtional groups pendant to the backbone (Si-O)x polymer chain. This type of synthesis has several advantages: 1)The sensitivity of the polymer can be optimized by adjusting the ratio of pendant groups. 2)Highly crosslinked branched structures are formed upon irradia tion, resulting in thermally stable polymers. Upon exposure to radiation, the polymer crosslinks and the unexposed polymer can be removed in various solvents. The remaining crosslinked polymer can act as a plasma etch barrier (etch rate in O2 = 15 Ao/min) or remain in place as an imageable dielectric. The photo-sensitivity and wavelength response of the resist can be optimized by incorporating photo-sensitizers or free radical initiators. These polymers also have good dielectric properties. EXAMPLE The following example is the general synthesis of these materials using cinnamoyl chloride, but radiation sensitive polymers using allylic, vinyl, methacrylic and acrylic monomers can also be obtained. Synthesis...