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Browse Prior Art Database

Photoresist-Adhesion Improvement on Polished Quartz Surface

IP.com Disclosure Number: IPCOM000039838D
Original Publication Date: 1987-Aug-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Bhattacharya, S: AUTHOR [+3]

Abstract

A method has been proposed to avoid the poor adhesion which lift-off resist structures exhibit to some surfaces in the processing of semiconductor devices. The proposal suggests the deposition of a thin nitride on the polished surface to which resist will adhere well. Photoresist (PR) adhesion to some surfaces is a problem in advanced lithography with small line/space maze regions. Various adhesion promoters and process modifications have not proven as effective as desired. The proposed method would be applied to an L/K structure 1 (Fig. 1) with composite insulator nitride 2 and sputtered quartz de position 3 having a surface 4. A thin layer of plasma-enhanced chemical vapor deposition (PECVD) nitride 5 (Fig. 2) is deposited on the surface 4 to provide adhesion to the PR 6 next laid down.

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Photoresist-Adhesion Improvement on Polished Quartz Surface

A method has been proposed to avoid the poor adhesion which lift-off resist structures exhibit to some surfaces in the processing of semiconductor devices. The proposal suggests the deposition of a thin nitride on the polished surface to which resist will adhere well. Photoresist (PR) adhesion to some surfaces is a problem in advanced lithography with small line/space maze regions. Various adhesion promoters and process modifications have not proven as effective as desired. The proposed method would be applied to an L/K structure 1 (Fig. 1) with composite insulator nitride 2 and sputtered quartz de position 3 having a surface 4. A thin layer of plasma-enhanced chemical vapor deposition (PECVD) nitride 5 (Fig. 2) is deposited on the surface 4 to provide adhesion to the PR 6 next laid down. In the fabrication of the lift-off structure a silylated PR layer 7 is laid down and a reactive ion etch (RIE) applied. Following the O2 RIE, CF4 is used to etch the area 8 over the metallization structure 1 to remove the PECVD nitride 5. Standard methods are then used to complete the device. The proposed method provides excellent adhesion of PR to the nitride and will substantially reduce pattern shifting during processing.

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