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Epitaxial 3d Structure Using Mixed Spinels

IP.com Disclosure Number: IPCOM000039882D
Original Publication Date: 1987-Aug-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Rosenberg, R: AUTHOR

Abstract

Mixed spinels, for instance, a ternary spinel, can be deposited on a silicon substrate and serve as a suitable substrate for the epitaxial growth of another top layer thereon. The top layer can be silicon or another semiconductor, such as GaAs. Each of the silicon layers (or the top GaAs layer) can have active devices in the layer. Examples of mixed spinels that can serve as suitable substrates for epitaxial growth include iron magnesium aluminate FeO$MgO$Al2O3 and magnesium aluminum gallate MgO$Al2O3$Ga2O3 . In the former, the amounts of FeO and MgO can be changed to alter the lattice parameter, while in the latter spinels the relative amounts of Al2O3 and Ga2O3 can be changed in order to change the lattice constant of the spinel.

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Epitaxial 3d Structure Using Mixed Spinels

Mixed spinels, for instance, a ternary spinel, can be deposited on a silicon substrate and serve as a suitable substrate for the epitaxial growth of another top layer thereon. The top layer can be silicon or another semiconductor, such as GaAs. Each of the silicon layers (or the top GaAs layer) can have active devices in the layer. Examples of mixed spinels that can serve as suitable substrates for epitaxial growth include iron magnesium aluminate FeO$MgO$Al2O3 and magnesium aluminum gallate MgO$Al2O3$Ga2O3 . In the former, the amounts of FeO and MgO can be changed to alter the lattice parameter, while in the latter spinels the relative amounts of Al2O3 and Ga2O3 can be changed in order to change the lattice constant of the spinel. The structure is shown in the diagram, where the intermediate spinel layer can be a thick layer which acts as an insulator between the top and bottom active layers. Due to the compositional tailoring of the spinel, the lattice parameter and coefficient of expansion can be adjusted to avoid stress in the spinel. This allows the use of thick spinel layers which can serve as electrical insulation layers.

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