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Process for Complete Hole Filling With CVD Material

IP.com Disclosure Number: IPCOM000040152D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cronin, JE: AUTHOR [+2]

Abstract

A two-step chemical vapor deposition (CVD) process is used to completely fill apertures formed in a layer. A high deposition rate, mass transfer limited process is first employed, followed by a slower, surface reaction rate limited process. A high deposition rate CVD process is used for filling the apertures to the point where the upper portions of the apertures are being filled faster than the lower portions thereof. By switching over to a low deposition rate CVD process once this point is reached, the apertures may be completely filled with CVD material. By the use of the above two-step process, the formation of voids within the CVD material filling the apertures is avoided.

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Process for Complete Hole Filling With CVD Material

A two-step chemical vapor deposition (CVD) process is used to completely fill apertures formed in a layer. A high deposition rate, mass transfer limited process is first employed, followed by a slower, surface reaction rate limited process. A high deposition rate CVD process is used for filling the apertures to the point where the upper portions of the apertures are being filled faster than the lower portions thereof. By switching over to a low deposition rate CVD process once this point is reached, the apertures may be completely filled with CVD material. By the use of the above two-step process, the formation of voids within the CVD material filling the apertures is avoided.

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