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Browse Prior Art Database

Method for Controlling Photoresist Sidewall Angle

IP.com Disclosure Number: IPCOM000040301D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Holland, KL: AUTHOR

Abstract

By means of an appropriate bake after exposure and before development of a photoresist layer, the slope of the sidewalls of openings formed in the developed photoresist is controlled. Unlike sidewall angle modification (slope control) by resist reflow (baking after development), baking after exposure and before development shows no sidewall slope dependence on image size or proximity to neighboring images. Referring to the figure, a cross-section of a developed image in photoresist 2 on a substrate 4 has a sidewall slope angle A. Magnitude of angle A is an inverse function of the product of post-exposure bake time (t) times temperature (T), i.e., A = f(1/tT).

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Method for Controlling Photoresist Sidewall Angle

By means of an appropriate bake after exposure and before development of a photoresist layer, the slope of the sidewalls of openings formed in the developed photoresist is controlled. Unlike sidewall angle modification (slope control) by resist reflow (baking after development), baking after exposure and before development shows no sidewall slope dependence on image size or proximity to neighboring images. Referring to the figure, a cross-section of a developed image in photoresist 2 on a substrate 4 has a sidewall slope angle A. Magnitude of angle A is an inverse function of the product of post-exposure bake time (t) times temperature (T), i.e., A = f(1/tT).

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