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Process for Fine Line Patterning

IP.com Disclosure Number: IPCOM000040308D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 2 page(s) / 61K

Publishing Venue

IBM

Related People

Holland, SP: AUTHOR

Abstract

A process using a trilayer resist and double photo processing extends the capability of exposure tooling to provide smaller lines at higher density. (Image Omitted) Figs. 1-7 show a sequence of cross-sections formed by a process for creating a high density of fine lines in a conductive thin film. Referring to Fig.1, conductive film 4 is deposited on insulating substrate 2. Film layer 6 is a material that can be reactive ion etched (RIE) in oxygen or can be made resistant to oxygen RIE (hardened) by any of several treatments. The hardening treatment also makes the material of film layer 6 resistant to dissolution in commom solvents. Layer 8 is a material which is etchable in an oxygen RIE process and is not altered by being exposed to the hardening treatment, i.e.

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Process for Fine Line Patterning

A process using a trilayer resist and double photo processing extends the capability of exposure tooling to provide smaller lines at higher density.

(Image Omitted)

Figs. 1-7 show a sequence of cross-sections formed by a process for creating a high density of fine lines in a conductive thin film. Referring to Fig.1, conductive film 4 is deposited on insulating substrate 2. Film layer 6 is a material that can be reactive ion etched (RIE) in oxygen or can be made resistant to oxygen RIE (hardened) by any of several treatments. The hardening treatment also makes the material of film layer 6 resistant to dissolution in commom solvents. Layer 8 is a material which is etchable in an oxygen RIE process and is not altered by being exposed to the hardening treatment, i.e., remains etchable in an oxygen RIE process and remains readily soluble. Film layer 10 is a photoresist which may be hardened against etching in an oxygen RIE process. It is the sum of layers 6, 8, and 10 that comprises the trilayer resist. Fig. 2 shows the results of photo-patterning photoresist layer 10, hardening, and oxygen RIE through layers 8 and 6. Cross-hatching is used to indicate hardened films in the figures. Fig. 3 results from an increased pressure of oxygen in the RIE system, causing plasma removal of exposed sidewall material from films 6 and 8. By applying the hardening process, then dissolving remaining film 8, hardened film 10 is lifted off, leaving a har...