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Structure for Determining the Lateral Diffusivity of Mobile Ions in Dual Dielectric Materials

IP.com Disclosure Number: IPCOM000040311D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Mann, RW: AUTHOR

Abstract

A structure and method for determining the lateral diffusivity of mobile ions in a dual dielectric structure is described. The structure enables Capacitance-Voltage (C-V) measurements which can be used to calculate the ion diffusivity in a corresponding dual dielectric. As shown in Fig. 1, the structure consists of a layer of dielectric 10 such as silicon nitride (Si3N4) on top of an oxide layer 12 which has been grown or deposited on a silicon semiconductor surface 14. A cut 16 in the dielectric is made parallel to several metal lines l1, l2,...lx ...lk which are of length L, and are of a width W and spacing S, as shown in Fig. 2. An aqueous solution of the mobile ion of interest is introduced into the dielectric cut 16 (Fig. 1).

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Structure for Determining the Lateral Diffusivity of Mobile Ions in Dual Dielectric Materials

A structure and method for determining the lateral diffusivity of mobile ions in a dual dielectric structure is described. The structure enables Capacitance-Voltage (C-V) measurements which can be used to calculate the ion diffusivity in a corresponding dual dielectric. As shown in Fig. 1, the structure consists of a layer of dielectric 10 such as silicon nitride (Si3N4) on top of an oxide layer 12 which has been grown or deposited on a silicon semiconductor surface 14. A cut 16 in the dielectric is made parallel to several metal lines l1, l2,...lx ...lk which are of length L, and are of a width W and spacing S, as shown in Fig. 2. An aqueous solution of the mobile ion of interest is introduced into the dielectric cut 16 (Fig.
1). The sample is then heated for a fixed time (t), followed by cleaning in a mild solution of acetic acid to remove any ions left on the surface of the cut. C-V measurements are then made for each line, moving laterally in the x direction (Fig. 2), away from the cut 16 in the dielectric. The mobile ion concentration (MIC) for line lx is then determined from the C-V curves using the difference between the flat band voltage obtained for lx (VFB-X) and the reference flat band voltage from lk (VFB-REF), as shown in the graph in Fig. 3. The diffusivity (D) is then determined by solving Fick's Second Law with the appropriate boundary conditions applied....