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Method for Forming Shallow P+ Diffusions

IP.com Disclosure Number: IPCOM000040319D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Roberts, S: AUTHOR [+2]

Abstract

A method is reported for providing shallow p+ diffusions of about 0.1 micrometer in silicon by the use of sputter-deposited titanium boride (TiBx, where x>2) as a diffusion source. The TiBx is deposited on the silicon surface. The free boron in the TiBx is diffused into the silicon by a rapid anneal. The remaining TiBx is then removed by exposing the film to an H2O2/NH4OH/H2O solution that does not damage the underlaying silicon surface.

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Method for Forming Shallow P+ Diffusions

A method is reported for providing shallow p+ diffusions of about 0.1 micrometer in silicon by the use of sputter-deposited titanium boride (TiBx, where x>2) as a diffusion source. The TiBx is deposited on the silicon surface. The free boron in the TiBx is diffused into the silicon by a rapid anneal. The remaining TiBx is then removed by exposing the film to an H2O2/NH4OH/H2O solution that does not damage the underlaying silicon surface.

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