Browse Prior Art Database

Light Emitting Device

IP.com Disclosure Number: IPCOM000040538D
Original Publication Date: 1987-Nov-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Epperlein, PW: AUTHOR

Abstract

The main element of a light-emitting device is a simple metal gate/ semiconductor Schottky contact configuration. Use is made of metal/ semiconductor interface states: Induced inversion layers are the source of minority carriers which, upon the application of control signals to the metal gate, drift away from the interface and recombine radiatively. Fig. 1 shows the configuration of the device. A n-GaAs semiconductor and a metal gate form a Schottky contact. In the n-type GaAs, a hole trap (minority carriers) is formed having its maximum concentration near the gate/semiconductor interface. It extends to about 30 nm (Image Omitted) into the semiconductor material. The interface states create an inversion layer due to the accumulation of holes (minority carriers) in the n-doped semiconductor material.

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Light Emitting Device

The main element of a light-emitting device is a simple metal gate/ semiconductor Schottky contact configuration. Use is made of metal/ semiconductor interface states: Induced inversion layers are the source of minority carriers which, upon the application of control signals to the metal gate, drift away from the interface and recombine radiatively. Fig. 1 shows the configuration of the device. A n-GaAs semiconductor and a metal gate form a Schottky contact. In the n-type GaAs, a hole trap (minority carriers) is formed having its maximum concentration near the gate/semiconductor interface. It extends to about 30 nm

(Image Omitted)

into the semiconductor material. The interface states create an inversion layer due to the accumulation of holes (minority carriers) in the n-doped semiconductor material. This is illustrated in Fig. 2, which shows the energy diagram with no bias voltage VB applied. By applying a positive voltage pulse (VB > 0) to the gate (Fig. 3), the conduction band (C.B.) and the valence band (V.B.) flatten, causing the electrons (majority carriers) to accumulate at the interface and the holes (minority carriers) to drift into the semiconductor where they can recombine radiatively. The energy of the emitted light is mainly determined by the energy gap Eg of the semiconductor. The intensity can be increased by negatively biasing the gate, thereby enhancing the hole concentration in the inversion layer. When an alternating voltag...