Browse Prior Art Database

Single Step Lift-Off Using Xylene

IP.com Disclosure Number: IPCOM000040566D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 2 page(s) / 54K

Publishing Venue

IBM

Related People

Cutler, R: AUTHOR

Abstract

Xylene is used in a single step lift-off to replace multi-step lift-off procedures used in manufacturing semiconductor devices. The xylene replaces other aromatic chemicals which may be used and results in the elimination of long cycle times which occur with conventional lift=off procedures. (Image Omitted) In the process (Fig. 1A), photoresist (PR) is applied in two steps to a substrate 2. The PR layer 1 is hardened in a Xylene soak which results in a hard surface layer 3 of PR shown in Fig. 1B. The xylene is the unique component in the process. Conventional processing is continued to expose and develop the structure in Fig. 1C, followed by the deposition of metal 4 shown in Fig. 1D. The lift-off step completes the process, leaving the exposed metal stud 4 shown in Fig. 1E on the substrate 2.

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Single Step Lift-Off Using Xylene

Xylene is used in a single step lift-off to replace multi-step lift-off procedures used in manufacturing semiconductor devices. The xylene replaces other aromatic chemicals which may be used and results in the elimination of long cycle times which occur with conventional lift=off procedures.

(Image Omitted)

In the process (Fig. 1A), photoresist (PR) is applied in two steps to a substrate 2. The PR layer 1 is hardened in a Xylene soak which results in a hard surface layer 3 of PR shown in Fig. 1B. The xylene is the unique component in the process. Conventional processing is continued to expose and develop the structure in Fig. 1C, followed by the deposition of metal 4 shown in Fig. 1D. The lift-off step completes the process, leaving the exposed metal stud 4 shown in Fig. 1E on the substrate 2.

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