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Electrostatic Dissipative Vacuum Pencil

IP.com Disclosure Number: IPCOM000040587D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Horstmann, RE: AUTHOR [+5]

Abstract

It has been proposed to modify vacuum pencils used in handling semiconductor wafers to enable them to effect wafer surface charge dissipation. In the processing of semiconductor wafers the problem of static electricity becomes of increasing concern as the complexity of devices increases and device tolerances decrease. A simple and effective method to dissipate electrostatic charges on semiconductor wafer surfaces is to make the vacuum pencil assembly a conductive link to drain the charges to ground. The manual handling of semiconductor wafers is achieved through the use of vacuum pencils or wands. Conventional vacuum pencils do not have electrically conductive characteristics.

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Electrostatic Dissipative Vacuum Pencil

It has been proposed to modify vacuum pencils used in handling semiconductor wafers to enable them to effect wafer surface charge dissipation. In the processing of semiconductor wafers the problem of static electricity becomes of increasing concern as the complexity of devices increases and device tolerances decrease. A simple and effective method to dissipate electrostatic charges on semiconductor wafer surfaces is to make the vacuum pencil assembly a conductive link to drain the charges to ground. The manual handling of semiconductor wafers is achieved through the use of vacuum pencils or wands. Conventional vacuum pencils do not have electrically conductive characteristics. The modification would utilize standard types of these pencils but substitute a conductive tip and, optically, a conductive body for the standard materials of construction. The tip and body (if appropriate) would be connected to ground through a one meg-ohm resistor. The tip and handle may be connected using either a common resistor or may be wired in parallel with independent resistors. This modification is far less expensive than installing blanket air ionization electrostatic charge dissipative coverage for entire facilities and provides a direct link between the wafers and ground. References 1 T. Turner, "Static in a Wafer Fabrication Facility," Semiconductor International, 122-126 (August 1983). 2 M. Yost, and A. Steinman, "Electrostatic Attracti...