Browse Prior Art Database

Use of a Low Temperature Silicon Deposit Over Heavily Doped Subcollectors Preventing Autodoping of Epitaxial Overlayers

IP.com Disclosure Number: IPCOM000040639D
Original Publication Date: 1987-Dec-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Acker, CP: AUTHOR

Abstract

As shown in Fig. 1, an epitaxial silicon layer 10 deposited over a heavily doped region 12 (such as a subcollector) may suffer from autodoping (see arrows) during deposition. As shown in Fig. 2, growing a layer of chemical vapor deposited (CVD) silicon 14 over the heavily doped region 12 prior to stripping the ion implant masking layers 16 and 18 allows the epitaxial silicon layer 20 to be grown over the heavily doped region 12 without autodoping of the epitaxial layer 20 (see Fig. 3).

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Use of a Low Temperature Silicon Deposit Over Heavily Doped Subcollectors Preventing Autodoping of Epitaxial Overlayers

As shown in Fig. 1, an epitaxial silicon layer 10 deposited over a heavily doped region 12 (such as a subcollector) may suffer from autodoping (see arrows) during deposition. As shown in Fig. 2, growing a layer of chemical vapor deposited (CVD) silicon 14 over the heavily doped region 12 prior to stripping the ion implant masking layers 16 and 18 allows the epitaxial silicon layer 20 to be grown over the heavily doped region 12 without autodoping of the epitaxial layer 20 (see Fig. 3).

1

Page 2 of 2

2

[This page contains 3 pictures or other non-text objects]