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Pattern for Electrical Assessment of Images Formed in Conductive Films

IP.com Disclosure Number: IPCOM000040780D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Dinklage, JB: AUTHOR [+3]

Abstract

A test pattern is described which enables sensitive electrical assessment of the success with which images are formed in electric ally conductive thin films. By measuring electrical resistance of the pattern with a four point probe, small shifts from nominal dimensions caused by variations in a photoetching process are readily detected.

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Pattern for Electrical Assessment of Images Formed in Conductive Films

A test pattern is described which enables sensitive electrical assessment of the success with which images are formed in electric ally conductive thin films. By measuring electrical resistance of the pattern with a four point probe, small shifts from nominal dimensions caused by variations in a photoetching process are readily detected.

Referring to the figure, current I passed through pads I1 and I2 and voltage V measured at pads V1 and V2 are used to determine electrical resistance R = V/I of a horizontal segment of the conductive film test pattern between the vertical connec- tion test pads V1 and V2. With a nominal value of dimension G being less than 1 micron and dimension W being 50 microns, the resistance R will depend mainly on dimensions of G and S = 2G actually achieved in the photo process. Sensitivity of resist- ance R to small variations in the photoetching process is increased by reducing the mask size of dimension G.

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