Browse Prior Art Database

Simultaneous Punch-Through Stop and Channel Stop Implants

IP.com Disclosure Number: IPCOM000040781D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

El-Kareh, B: AUTHOR [+3]

Abstract

By appropriate selection of ion implantation energy and dose, a single photomask and a single ion implantation is used to create a boron doped punch-through stop under n-type device channels and to supply boron doping under recessed oxide regions to provide field tailoring for channel stop regions.

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Simultaneous Punch-Through Stop and Channel Stop Implants

By appropriate selection of ion implantation energy and dose, a single photomask and a single ion implantation is used to create a boron doped punch- through stop under n-type device channels and to supply boron doping under recessed oxide regions to provide field tailoring for channel stop regions.

The figure shows a region of the silicon wafer 2 containing n-type devices (not shown) and recessed oxide regions 4. The entire wafer surface is covered with a sacrificial oxide 6. Regions of the wafer containing p-type devices are protected by photoresist 8. Boron ion implantation is performed to result in boron doping at a depth indicated by a dashed line in the figure. Thus, doping to create field tailoring for channel stop regions is formed under the recessed oxide regions 4 and doping between regions 4 forms the punch-through stop under n- type device channels.

Disclosed anonymously

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