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Photochemical Deposition of Silicon Nitride

IP.com Disclosure Number: IPCOM000040807D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Jasinski, JM: AUTHOR [+2]

Abstract

Silicon nitride films can be photochemically deposited from mixtures of silane (SiH4) and ammonia (NH3) or disilane (Si2H6) and ammonia using 193 nm radiation from an excimer laser. Instead of silane or disilane as silicon sources, dis-silylamine(SiH3)2NH or tris-silylamine(SiH3)N can be used. Both of these materials are liquids having sufficient room temperature vapor pressures and sufficient chemical stability to be used in photochemical deposition of thin films.

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Photochemical Deposition of Silicon Nitride

Silicon nitride films can be photochemically deposited from mixtures of silane (SiH4) and ammonia (NH3) or disilane (Si2H6) and ammonia using 193 nm radiation from an excimer laser. Instead of silane or disilane as silicon sources, dis-silylamine(SiH3)2NH or tris-silylamine(SiH3)N can be used. Both of these materials are liquids having sufficient room temperature vapor pressures and sufficient chemical stability to be used in photochemical deposition of thin films.

Disclosed anonymously

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