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Debris Free Polymer Laser Etching

IP.com Disclosure Number: IPCOM000040816D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Donelon, JJ: AUTHOR

Abstract

Essentially debris free etching in polyimide is possible without enclosing the specimen in a vacuum chamber. Successful laser ablation experiments were carried out at both 248 nm and 308 nm.

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Debris Free Polymer Laser Etching

Essentially debris free etching in polyimide is possible without enclosing the specimen in a vacuum chamber. Successful laser ablation experiments were carried out at both 248 nm and 308 nm.

Etching under a flow of trichlorotrifluoroethane extinguished the plume and carried away the debris. This system also provided a self-disposing system for the liquid as well as leaving no residue on the substrate.

If the material is vertically mounted, the debris is carried away with the aid of gravity.

Trichlorotrifluoroethane evaporates rapidly. By elevating the temperature of the sample slightly, the evaporation time reduces to a negligible amount. The exhaust needed for airborne debris and liberated gas in the original configuration serves as exhaust for the vapors produced by the chemical.

When a fine spray of C2C13F3 is applied to the specimen during etching, the usual plume extinguishes. Microscopic investigation reveals clean etching is achieved.

As to other liquids, a spray of deionized water also extinguishes the plume and produces debris free etching in the proximity of the etched feature, but the debris settles in a location Z 1 mm away from the etched feature. The remaining liquid is a problem since it does not evaporate readily.

A cleaning solvent (containing C2C13F3) performs as well as the trichlorotrifluoroethane except that some residue appears on the sample after evaporation of the solvent.

The Freons will perform well. The...