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Browse Prior Art Database

X-Ray Contrast Control

IP.com Disclosure Number: IPCOM000040818D
Original Publication Date: 1987-Jan-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Boland, JJ: AUTHOR

Abstract

In the studies of circuit devices, x-ray photoelectron spectroscopy can be reliably used for analysis when bias voltages are applied to various elements of the devices. The application of a bias voltage shifts the Fermi levels of the individual elements producing a corresponding shift in the binding energies of electrons emitted from these elements. This enables separation of x-ray photoelectron spectroscopy signals due to different types of atoms originating from various regions of the examined specimen. A conventional x-ray source with contrast bias can be used to resolve areas as small as 250x250 microns.

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X-Ray Contrast Control

In the studies of circuit devices, x-ray photoelectron spectroscopy can be reliably used for analysis when bias voltages are applied to various elements of the devices. The application of a bias voltage shifts the Fermi levels of the individual elements producing a corresponding shift in the binding energies of electrons emitted from these elements. This enables separation of x-ray photoelectron spectroscopy signals due to different types of atoms originating from various regions of the examined specimen. A conventional x-ray source with contrast bias can be used to resolve areas as small as 250x250 microns.

Disclosed anonymously

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