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In Situ Resist Hardening Technique

IP.com Disclosure Number: IPCOM000040851D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Katz, SM: AUTHOR [+2]

Abstract

In a process sequence in which two layers of photoresist are required, the first photoresist layer must be hardened to create a polymer impervious to chemical attack in the event that the second resist layer requires reworking. A process is described for improved hardening using ionizing radiation. Step 1. Argon is introduced into a reactive ion etch tool. Step 2. Low power ion bombardment. Step 3. Power is ramped to high power. Step 4. High power bombardment.

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In Situ Resist Hardening Technique

In a process sequence in which two layers of photoresist are required, the first photoresist layer must be hardened to create a polymer impervious to chemical attack in the event that the second resist layer requires reworking. A process is described for improved hardening using ionizing radiation. Step 1. Argon is introduced into a reactive ion etch tool. Step 2. Low power ion bombardment. Step 3. Power is ramped to high power. Step 4. High power bombardment.

With this method, a layer of resist can be hardened throughout its depth, if desired without unwanted removal of the photoresist.

Disclosed anonymously

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