Browse Prior Art Database

Radiation-Induced Repair of Clear Defects in Masks

IP.com Disclosure Number: IPCOM000040863D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Baum, TH: AUTHOR [+4]

Abstract

The repair of clear mask defects can be achieved through the u of volatile organometallic complexes which can be locally decompos The decomposition can be induced thermally, photochemically, or by other energetic pathways.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Radiation-Induced Repair of Clear Defects in Masks

The repair of clear mask defects can be achieved through the u of volatile organometallic complexes which can be locally decompos The decomposition can be induced thermally, photochemically, or by other energetic pathways.

The organometallic compound may be varied to achieve the desired deposition of metal in a specific, localized region. The deposition of gold, chromium, tungsten, palladium or other desired metal may be utilized.

The radiation sources used for the spatially localized decomposition may be a foucsed laser, focused ion beam, focused electron beam or other energetic beam (i.e. x-ray). The repaired masks (with filled clear defects) are used for optical, x-ray and/or electron lithographies; the metal deposited is dependent upon the ultimate use of the repaired mask. For example, gold, palladium and/or tungsten may be utilized to repair clear defects for an x-ray mask. The final mask pattern will also be determined the microelectronics application.

Disclosed anonymously

1