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Chemical Etching of Alumina

IP.com Disclosure Number: IPCOM000040872D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Pridans, JV: AUTHOR [+2]

Abstract

Oxygen rich alumina can be chemically etched in a solution wit a higher concentration of phosphoric acid than that used for oxyge poor alumina.

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Chemical Etching of Alumina

Oxygen rich alumina can be chemically etched in a solution wit a higher concentration of phosphoric acid than that used for oxyge poor alumina.

The sputter deposition of alumina can result in the random production of oxygen rich and oxygen deficient alumina deposits. Oxygen rich alumina has an apparent chemical inertness to phosphor acid etching.

The oxygen rich alumina can be chemically etched in a more concentrated phosphoric acid bath apparently because of the result of a partial proton transfer reaction. The more concentrat solution provides the necessary amount of phosphate that is required to compensate for the high oxygen content of the alumina. The electronegativity of the metal-oxygen bond is thus lowered by the solution. This reduces the potential of the activation energy required for the dissociation of the oxygen rich alumina to form alumina phosphate and thereby permits etching.

Disclosed anonymously

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