Browse Prior Art Database

Cermet Processing

IP.com Disclosure Number: IPCOM000040875D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR

Abstract

Cermet resistors are formed with improved uniformity and reli- ability by returning the chromium-silicon oxide mixture to an amorphous state after subsequent metal deposition and insuring crystallization of the cermet under more closely controlled conditions.

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Cermet Processing

Cermet resistors are formed with improved uniformity and reli- ability by returning the chromium-silicon oxide mixture to an amorphous state after subsequent metal deposition and insuring crystallization of the cermet under more closely controlled conditions.

Heretofore the crystallization of a chromium and silicon oxide mixture into cermet was typically accomplished in an atmosphere of free chromium and a relatively uncontrolled temper- ature sequence during subsequent vacuum deposition of chromium and copper layers. Improved crystallization is achieved by returning crystallized cermet to an amorphous state by ion implantation after metal deposition and producing crystallization under controlled environment and temperature. Metal etching and trimming can then be performed.

Disclosed anonymously

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