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Browse Prior Art Database

Tungsten Deposition with Disilane

IP.com Disclosure Number: IPCOM000040876D
Original Publication Date: 1987-Feb-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Emma, SA: AUTHOR [+2]

Abstract

This article relates generally to integrated circuit con- struction and, more particularly, to deposition of tungsten.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Tungsten Deposition with Disilane

This article relates generally to integrated circuit con- struction and, more particularly, to deposition of tungsten.

Tungsten layers can be reproducibly deposited in a safer process and at a faster rate by using disilane and tungsten hexafluoride during low pressure chemical vapor deposition.

A substrate is first subjected to disilane in a plasma mode for a designated time. The plasma is then shut off and tungsten hexafluoride is passed over the substrate for the same time to convert the silicon to tungsten. Successive cycles of subjecting the substrate alternately to disilane and tungsten hexafluoride continue until the desired tungsten thickness is achieved.

This technique improves adhesion of tungsten during annealing and can be accomplished without modification to existing low pressure chemical vapor deposition systems.

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