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Multi-Level Chip Carrier using Silylated Photoresist as Dielectric

IP.com Disclosure Number: IPCOM000040890D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Katyl, RH: AUTHOR [+2]

Abstract

Dry film photoresist is used as the dielectric between the wiring layers of a multi level chip carrier in a metallized ceramic polyimide process. The photoresist acquires the capacity to withstand high temperatures required for solder attachment after it is silylated. The process works as follows.

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Multi-Level Chip Carrier using Silylated Photoresist as Dielectric

Dry film photoresist is used as the dielectric between the wiring layers of a multi level chip carrier in a metallized ceramic polyimide process. The photoresist acquires the capacity to withstand high temperatures required for solder attachment after it is silylated. The process works as follows.

A ceramic substrate is coated with successive layers of chromium/copper/chromium. The Cr/Cu/Cr layers are then circuitized and the resulting configuration is seen in Fig. 1 with circuits 1 on substrate 2.

A dry film photoresist 3 (Fig. 1a) is hot roll laminated on the substrate 2 and the photoresist 3 is then optically exposed with a via pattern and developed. The via 4 is seen in Fig. 1b.

The dry film resist is silylated by immersion into into a hexamethylcyclotrisilazane solution. The top chromium layer 5 (Fig. 1c) of the first metallization layer M1 wiring is etched and the second metallization layer personalization and select process is completed (Fig. 1d).

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