Browse Prior Art Database

Methods of Forming Bridging Contacts

IP.com Disclosure Number: IPCOM000040913D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chin, D: AUTHOR [+3]

Abstract

This article relates generally to integrated circuit fabrication and, more particularly, to the construction of bridging contacts.

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This is the abbreviated version, containing approximately 100% of the total text.

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Methods of Forming Bridging Contacts

This article relates generally to integrated circuit fabrication and, more particularly, to the construction of bridging contacts.

Metal layer bridging contacts between the source and polysilicon gate in CMOS devices permit smaller cell size and can be fabricated easily with good reliability. These contacts use the same material as that for the low-resistance silicide layer on gates and diffused areas and can be formed by either of two methods.

The first method, shown in Fig. 1, is to protect the metal (typically titanium) used to form the low-resistance silicide layer 1 covering gate area 2 and polysilicon layer 3 on substrate 4. Bridging contact site 5 is protected by photoresist 6 when removing the metal on spacer 7 between the source and polysilicon gate after the self-aligned silicide formation.

The second method, in Fig. 2, is to remove spacer 8 (shown in phantom) at bridging contact site 5 prior to depositing the metal for silicide layer 1. In this technique, gate oxide 9 is so thin under polysilicon 3 that the silicide bridge can be made. Using the above-described steps, the p+ source and n+ polysilicon gate contact can be made simultaneously.

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Disclosed anonymously

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