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Plasma Induced Masking

IP.com Disclosure Number: IPCOM000040927D
Original Publication Date: 1987-Mar-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brady, MJ: AUTHOR [+3]

Abstract

Rare earth metals are dry etched with improved edge definition and little degradation of film quality by using a plasma-induced coating to produce the etching mask.

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Plasma Induced Masking

Rare earth metals are dry etched with improved edge definition and little degradation of film quality by using a plasma-induced coating to produce the etching mask.

A silicon wafer is blanketed with a coating of rare earth metals, such as gadolinium and cobalt, by electron beam deposition. Photoresist is spin coated, exposed and developed on the evaporated metals. The prepared wafer is subjected to plasma etching in a barrel reactor with a gas mixture of carbon tetrafluoride and oxygen (8.5%). This forms and grows a fluorocarbon- like film on the exposed metal pattern. The resist stencil is then removed and the rare earth film is sputter etched in argon. Thereafter, the protective flurocarbon-like film is removed.

Disclosed anonymously

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