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A Chlorinated RIE Process with High Si3N4:SiO2 Etch Selectivity

IP.com Disclosure Number: IPCOM000040960D
Original Publication Date: 1987-Apr-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Arroyo, MA: AUTHOR [+2]

Abstract

The process described below allows for high etch selectivity of silicon nitride with the respect to silicon dioxide. This is important in the definition of nitride spacers and other processing steps. Step 1 - Chamber Treatment

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A Chlorinated RIE Process with High Si3N4:SiO2 Etch Selectivity

The process described below allows for high etch selectivity of silicon nitride with the respect to silicon dioxide. This is important in the definition of nitride spacers and other processing steps. Step 1 - Chamber Treatment

This initial etch step with argon/20 percent oxygen reduces the amount of BClx present in the reactive ion etch chamber, minimizing the silicon dioxide etch rate, while maintaining a constant silicon nitride etching rate. Step 2 - Silicon Nitride Etch

A mixture of HCl and BCl3 with a flow ratio of 60:5 is then used to etch the silicon nitride. The process described results in an etch ratio of Si3N4:SiO2 between (7.2-12.5):1.

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