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Chromium Plasma Etch Process with Endpoint Detection

IP.com Disclosure Number: IPCOM000041012D
Original Publication Date: 1987-May-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Egitto, FD: AUTHOR

Abstract

The endpoint of a chromium etching process is detected by monitoring the intensity of the luminescence which is in the area of the sample being etched.

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Chromium Plasma Etch Process with Endpoint Detection

The endpoint of a chromium etching process is detected by monitoring the intensity of the luminescence which is in the area of the sample being etched.

Samples coated with thin films of chromium have been etched in an rf plasma using oxygen and tetrafluoromethane as etching gases. Sample structure is shown in Fig. 1. The plasma etch system used was a conventional diode type and is shown schematically in Fig. 2. When chromium is present and etching, a localized luminescence is observed in the gas in the area above and around the sample. When all of the Cr has been etched and the etching products exhausted from the chamber, the luminescence ceases. Optical emission spectra show that the luminescence is a broadband, continuum in the visible region. By continuously monitoring the intensity of the continuum, or some wavelength contained within the continuum, the endpoint of the etch process can be detected.

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