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A Novel Process for the Reduction of Bird's Beak During Localized Oxidation

IP.com Disclosure Number: IPCOM000041057D
Original Publication Date: 1987-Jun-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Barber, JR: AUTHOR [+2]

Abstract

This article describes a method to reduce the oxide penetration under a nitride layer during a localized oxidation process. This can reduce or eliminate the formation of a bird's beak.

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A Novel Process for the Reduction of Bird's Beak During Localized Oxidation

This article describes a method to reduce the oxide penetration under a nitride layer during a localized oxidation process. This can reduce or eliminate the formation of a bird's beak.

Referring to Fig. 1, a semiconductor substrate 10 has silicon oxide layer 12 and silicon nitride layer 14 deposited and lithographically defined. A conformal oxide layer 16 (Fig. 2) is subsequently applied and anisotropically etched, leaving oxide spacers 18 as seen in Fig. 3. During a subsequent oxidation step to oxidize region 19, the oxide spacers 18 will seal the underlying oxide layer 12, thereby preventing any undesired oxidation of that oxide layer and reducing the possibility of lifting the edge of the nitride layer 14.

Disclosed anonymously.

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