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Photoresist Insulation

IP.com Disclosure Number: IPCOM000041090D
Original Publication Date: 1987-Jul-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kluge, HC: AUTHOR

Abstract

Commercially available positive photoresist is often used for insulation between layers on thin film heads. The addition of free-radical initiators of an organoperoxide provides a cross- linked material that will not crack as an insulated layer.

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Photoresist Insulation

Commercially available positive photoresist is often used for insulation between layers on thin film heads. The addition of free-radical initiators of an organoperoxide provides a cross- linked material that will not crack as an insulated layer.

Free-radical initiators, such as benzoyl peroxide or tertiary butyl peroxide, can be added to a commercially available positive photoresist to provide a cross- linked material suitable for backturn insulation on thin film heads. The photoresist with the additive can be post-baked at a relatively high temperature and will not outgas or crack, thereby allowing a uniformly impervious protection at an ambient temperature. A small amount, approximately two mole percent by weight of the organoperoxide, is added to a liter of photoresist material. The thermal free- radical initiator will cross-link the photoresist when it is post-baked at temperatures exceeding the point of the particular initiator. The initiator is 85 degrees centigrade for benzoyl peroxide and l35 degrees centigrade for tertiary butyl peroxide. A post-bake of 2l0 degrees centigrade is suitable to provide an efficient insulation layer.

Disclosed anonymously.

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