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A Unique Contact Profiling Process Utilizing Titanium

IP.com Disclosure Number: IPCOM000041164D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Lamey, P: AUTHOR [+3]

Abstract

Contact profiling through resist erosion is currently being utilized to enhance or achieve continuous metal step coverage. The ability to maintain minimum dimension is limited by the characteristics of resist etching. Also the integrity of the used insulator over adjacent wiring will be jeopardized due to the erosion scenario. The disclosed process will allow controlled uniform contact profiling at tighter dimensions without any sacrifice to the insulator performance.

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A Unique Contact Profiling Process Utilizing Titanium

Contact profiling through resist erosion is currently being utilized to enhance or achieve continuous metal step coverage. The ability to maintain minimum dimension is limited by the characteristics of resist etching. Also the integrity of the used insulator over adjacent wiring will be jeopardized due to the erosion scenario. The disclosed process will allow controlled uniform contact profiling at tighter dimensions without any sacrifice to the insulator performance.

Referring to Fig. 1, following the previous interconnect level 10 an insulator 12 is deposited. Photoresist is applied/patterned and the contacts are defined using an anisotropic etch. Upon removal of the resist, titanium 14 is evaporated at an elevated temperature to produce a conformal coverage. A blanket etch removes the titanium, except at the sidewalls 16, thus providing the gradual profile needed for subsequent metal coverage 18 (Fig. 2).

Disclosed anonymously.

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