Browse Prior Art Database

BI-FET High Capacitance Net Driver

IP.com Disclosure Number: IPCOM000041181D
Original Publication Date: 1987-Nov-01
Included in the Prior Art Database: 2005-Feb-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Aipperspach, AG: AUTHOR [+2]

Abstract

A BI-FET design net driver can drive to the power supply levels, and requires no D.C. power. Fast transient behavior, low power consumption and excellent switch point control is provided.

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BI-FET High Capacitance Net Driver

A BI-FET design net driver can drive to the power supply levels, and requires no D.C. power. Fast transient behavior, low power consumption and excellent switch point control is provided.

When the input Vin rises from a 0 to a 1, node A is discharged through device
1. Device 3 turns on and device 5 shuts off. Node B is charged to VDD turning on device 7. Device 7 will charge Vout with its high capacitance to VDD-Vbe. The feedback devices (9 and 10) are sized such that node D goes low just as Vout reaches its BIPOLAR up level. As device 4 turns on, device 3 and 4 now charge the output to the VDD supply.

When Vin falls from a 1 to a 0, node A charges to VDD shutting off device 3 and turning on device 5. Device 6 is off. As device 5 turns on, node C rises and device 8 discharges the output to a Vbe above ground. At this time the feedback devices turn on device 6 and the output node is discharged to ground.

Disclosed anonymously.

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